TPC8301 2003-02-18 1 toshiba field effect transistor silicon p channel mos type (l 2 ?? mosvi) TPC8301 lithium ion battery applications portable equipment applications notebook pcs small footprint due to small and thin package low drain ? source on resistance : r ds (on) = 95 m ? (typ.) high forward transfer admittance : |y fs | = 4 s (typ.) low leakage current : i dss = ?1 0 a (max) (v ds = ? 30 v) enhancement ? mode : v th = ? 0.8~ ? 2.0 v (v ds = ?1 0 v, i d = ?1 ma) maximum ratings (ta = 25c) characteristics symbol rating unit drain ? source voltage v dss ? 30 v drain ? gate voltage (r gs = 20 k ? ) v dgr ? 30 v gate ? source voltage v gss 20 v d c (note 1) i d ? 3.5 drain current pulse (note 1) i dp ? 14 a single-device operation (note 3a) p d (1) 1.5 drain power dissipation (t = 10 s) (note 2a) single-devece value at dual operation (note 3b) p d (2) 1.0 w single-device operation (note 3a) p d (1) 0.75 drain power dissipation (t = 10 s) (note 2b) single-devece value at dual operation (note 3b) p d (2) 0.45 w single pulse avalanche energy (note 4) e as 16 mj avalanche current i ar ? 3.5 a repetitive avalanche energy (note 2a, note 3b, note 5) e ar 0.10 mj channel temperature t ch 150 storage temperature range t stg ? 55 150 note: for (note 1), (note 2a), (note 2b), (note 3a), (note 3b), (note 4) and (note 5), please refer to the next page. this transistor is an electrostatic sensitive device. please handle with caution. unit: mm jedec D jeita D toshiba 2-6j1e weight: 0.080 g (typ.) circuit configuration
TPC8301 2003-02-18 2 thermal characteristics characteristics symbol max unit single-device operation (note 3a) r th (ch-a) (1) 83.3 thermal resistance, channel to ambient (t = 10 s) (note 2a) single-device value at dual operation (note 3b) r th (ch-a) (2) 125 single-device operation (note 3a) r th (ch-a) (1) 167 thermal resistance, channel to ambient (t = 10 s) (note 2b) single-device value at dual operation (note 3b) r th (ch-a) (2) 278 c/w marking note 1: please use devices on condition that the channel temperature is below 150c. note 2: a) device mounted on a glass-epoxy board (a) b) device mounted on a glass-epoxy board (b) note 3: a) the power dissipation and thermal resistance values are shown for a single device (during single-device operation, power is only applied to one device.) b) the power dissipation and thermal resistance values are shown for a single device (during dual operation, power is evenly applied to both devices.) note 4: v dd = ? 24 v, t ch = 25c (initial), l = 1.0 mh, r g = 25 ? , i ar = ? 3.5 a note 5: repetitive rating: pulse width limited by maximum channel temperature note 6: on lower left of the marking indicates pin 1. type TPC8301 fr-4 25.4 25.4 0.8 (unit: mm) (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) lot no. weekly code: (three digits) week of manufacture (01 for first week of year, continues up to 52 or 53) year of manufacture (one low-order digits of calendar year)
TPC8301 2003-02-18 3 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cut ? off current i dss v ds = ? 30 v, v gs = 0 v ? ? ? 10 a drain ? source breakdown voltage v (br) dss i d = ? 10 ma, v gs = 0 v ? 30 ? ? v gate threshold voltage v th v ds = ? 10 v, i d = ? 1 ma ? 0.8 ? ? 2.0 v r ds (on) v gs = ? 4 v, i d = ? 1.8 a ? 155 190 drain ? source on resistance r ds (on) v gs = ? 10 v, i d = ? 1.8 a ? 95 120 m ? forward transfer admittance |y fs | v ds = ? 10 v, i d = ? 1.8 a 2 4 ? s input capacitance c iss ? 540 ? reverse transfer capacitance c rss ? 80 ? output capacitance c oss v ds = ? 10 v, v gs = 0 v, f = 1 mhz ? 290 ? pf rise time t r ? 11 ? turn ? on time t on ? 17 ? fall time t f ? 11 ? switching time turn ? off time t off ? 70 ? ns total gate charge (gate ? source plus gate ? drain) q g ? 18 ? gate ? source charge q gs ? 13 ? gate ? drain (?miller?) charge q gd v dd ? 24 v, v gs = ? 10 v, i d = ? 3.5 a ? 5 ? nc source ? drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? ? 14 a forward voltage (diode) v dsf i dr = ? 3.5 a, v gs = 0 v ? ? 1.2 v
TPC8301 2003-02-18 4
TPC8301 2003-02-18 5 drain power dissipation p d (w) ambient temperature ta ( c) p d ? ta (1) (2) 0 0 50 100 150 200 0.5 1.0 1.5 2.0 (4) (3) device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) t 10 s
TPC8301 2003-02-18 6 r th t w pulse width t w (s) transient thermal impedance r th (c/w) 0.1 0.001 0.01 0.1 1 10 100 1000 1 0.3 0.5 3 5 10 30 50 100 300 1000 500 device mounted on a glass-epoxy board (a) (note 2a) (1) single-device operation (note 3a) (2) single-device value at dual operation (note 3b) device mounted on a glass-epoxy board (b) (note 2b) (3) single-device operation (note 3a) (4) single-device value at dual operation (note 3b) (1) single pulse (2) (3) (4)
TPC8301 2003-02-18 7 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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